Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD

Spatial control of InGaN luminescence by MOCVD selective epitaxy

Selective epitaxial growth of InGaN alloys was performed by metalorganic chemical vapor deposition (MOCVD). Templates consisted of arrays of circular etched holes in a SiO 2 mask layer, with pre-grown GaN hexagonal pyramid structures. The room temperature (300 K) photoluminescence (PL) peak wavelength increased with increasing maskopening spacing for a constant mask-opening diameter. For 5 lm d...

Controlled growth of hexagonal GaN pyramids and InGaN QDs

Linköping University Post Print Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures

The inherent advantages of the hot-wall metal organic chemical vapor deposition (MOCVD reactor (low temperature gradients, less bowing of the wafer during growth, efficient precursor cracking) compared to a cold-wall reactor make it easier to obtain uniform growth. However, arcing may occur in the growth chamber during growth, which deteriorates the properties of the grown material. By insertin...

GaN Based Nanomaterials Fabrication with Anodic Aluminium Oxide by MOCVD

A highly self-ordered hexagonal array of cylindrical pores has been fabricated by anodizing a thin film of Al on substrate and subsequent growth of GaN and InGaN in these nanoholes has been performed. This AAO templatebased synthesis method provides a low cost process to fabricate GaN-based nanomaterials fabrication.

Epitaxial Growth of III–Nitride/Graphene Heterostructures for Electronic Devices

Epitaxial GaN films were grown by metal organic chemical vapor deposition (MOCVD) on functionalized epitaxial graphene (EG) using a thin ( 11 nm) conformal AlN nucleation layer. Raman measurements show a graphene 2D peak at 2719 cm 1 after GaN growth. X-ray diffraction analysis reveals [0001]-oriented hexagonal GaN with (0002) peak rocking curve full width at the half maximum (FWHM) of 544 arcs...